Digital switch and femtotesla magnetic field sensor based on fano resonance in a spin field effect transistor. Pdf complementary spin transistor using a quantum well. Developing graphenebased spin field effect transistors. The field of spintronics concerns spin charge coupling in metallic systems. Figure 1 illustration of the experiment and scanning electron microscope sem image of the devices. The fieldeffect transistor fet is a type of transistor which uses an electric field to control the flow of current. Complementary spin transistor using a quantum well channel. Nonballistic spinfieldeffect transistor john schliemann, j. Quantum transistor harnesses new effect use arduino for. Quantum spin hall effect and topological field effect transistor in twodimensional transition metal dichalcogenides xiaofeng qian1, junwei liu2, liang fu2, and ju li1, 1department of nuclear science and engineering and department of materials science and engineering, massachusetts institute of technology, cambridge, massachusetts 029, usa.
Spin waves are generated by an oscillating magnetic field ht at. The conducting channel connecting the two electrodes is a twodimensional electron gas in semiconductor heterojunction with strong spin orbit coupling. A numerical simulation of spindependent quantum transport for a spin field effect transistor is implemented in a widely used simulator, nanomos. In such emerging hybrid molecular devices, the possibility of the josephson effect, that is, the dissipationless transport of cooperpaired electrons from one electrode to the other, arises. Mosfet, the tunnel elde ect transistor tfet has been proposed. Electrically induced 2d halfmetallic antiferromagnets and. We discuss the transport properties of a quantum spinhall insulator with sizable rashba spinorbit coupling in a disk geometry. Though quantum transistors are a novelty today, they will be needed once the classical field effect transistor fet can be made no smalleran event even now on engineers radar screens. Quantum point contacts were first reported in 1988 by a dutch group van wees et al. We propose, theoretically, a type of quantum field effect transistor that operates purely on the flow of spin current in the absence of charge current. Pdf spin fieldeffect transistor in a quantum spinhall. A quantum point contact qpc is a narrow constriction between two wide electrically conducting regions, of a width comparable to the electronic wavelength nano to micrometer. Called a topological field effect transistor, or tfet, the design is based on a single layer of the 2d material sandwiched by two layers of 2d boron nitride. Highly efficient gate controllability of rashba spinorbit interaction.
It is currently common belief that the dattadas type spin fet can operate only in regime of ballistic. The spin transistor comes about as a result of research on. Quantum spin hall effect and topological field effect transistor in twodimensional transition metal dichalcogenides authors. Quantum interference in singlemolecule superconducting. The rotating magnetic field rotates with the angular frequency. Xiaofeng qian1, junwei liu2, liang fu2, and ju li1, affiliations. Already in research labs around the world the last generation of bulk cmos is being explored, wrote honsum. Reflection and refraction of an electron spin at the. Spinfets are composed of two ferromagnetic contacts source and. We have combined the two directions by realizing an allsemiconductor spin hall effect transistor. We propose a spin field effect transistor based on spin orbit coupling of both the rashba and the dresselhaus types. Single molecules can be coupled to metallic electrodes when the latter are in the superconducting state. Spin transistors and spin hall effects have been two separate leading directions of research in this field. Carlos egues, and daniel loss department of physics and astronomy, university of basel, ch4056 basel, switzerland received 26 november 2002.
Pdf we discuss the transport properties of a quantum spin hall insulator with sizable rashba spin orbit coupling in a disk geometry. The device uses diffusive transport and operates without. Introduction of allelectric spin fieldeffect transistor. Antiferromagnetic spin wave fieldeffect transistor. We not only show that our device has good fet properties such as a high. A numerical simulation of spindependent quantum transport for a spin field effect transistor. Transistors prelude quantum computers use arduino for. We propose, theoretically, a new type of quantum field effect transistor that operates purely on the flow of spin current in the absence of charge current. We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire fieldeffect transistor. A quantum fieldeffect transistor qfet or quantum well field effect transistor qwfet is a type of mosfet metaloxidesemiconductor field effect transistor that takes advantage of quantum tunneling to greatly increase the speed of transistor operation by eliminating the traditional transistors area of electron conduction which typically causes carriers to slow down by a factor of 3000. A realization of an allelectric allsemiconductor spinfield effect transistor in which these obstacles are overcome by using two quantum points contact as spin. The researchers say such devices could be produced at very high density on a chip and have very.
A numerical simulation of spin dependent quantum transport for a spin field effect transistor spinfet is implemented in a widely used simulator nanomos. A twodimensional spin fieldeffect transistor arxiv. The pure spin current could be used as information transistors and logic devices. Spin fieldeffect transistor in a quantum spinhall device. More than two decades later, this research has reached the quantum regime 3. Pdf allelectric allsemiconductor spin fieldeffect transistors. Spin polarized injection of electrons from a twodimensional medium into another the latter possessing strong spin orbit interaction is at the core of a number of spin field effect transistors that operate on the principle of gatetunable spin orbit interaction 1, 2.
Silicene is a quantum spin hall insulator, which undergoes a topological phase transition into other insulators by applying external fields. They are based on earlier work by the british group which showed how split. In this theoretical study, we demonstrate that a junction formed by two superconductors linked by. One motivation for this is the desire for miniaturization which led to the realization of singleelectron. Pdf the spin fieldeffecttransistor shreyas shah academia. Allelectric allsemiconductor spin fieldeffect transistors. Where the gate is cobalt, the resulting magnetic oxide is co 3 o 4 111. We measure the charge stability of the double quantum dot in dc transport as well as dispersively. Department of physics, the university of hong kong.
A graphenebased spin fieldeffect transistor has been used in an operating at room temperature. Two quantum point contacts are used to respectively inject and detect spins by purely electrical means in an allsemiconductor spin transistor. Mesoscopic spinflip transport through a quantum dot. In the second chapter, we look more into details of spin field effect transistor from a device point of view. We propose to determine topological phase transitions by measuring the density of states and conductance. The spin filtering effect proposed in this paper requires the lateral rashba so interaction i. The spin injected field effect transistor, a lateral semiconducting channel with two ferromagnetic electrodes, lies at the foundation of spintronics research. Coherent spin precession in a rashba effective magnetic field in the channel of a spin field effect transistor and the spin hall effect are the two most compelling topics in this area.
In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n and ptype conventional charge. This spin field effect transistor sfet is constructed without magnetic material, but with the help of a spin flip mechanism provided by a rotating external magnetic field. This transistor consists of two ferromagnetic electrodes, i. Different from earlier proposals, spin transport through our device is tolerant. We investigate transport properties of silicene nanoribbons based on the landauer formalism. Simulation of the spin field effect transistors arxiv. The quantum hall effect or integer quantum hall effect is a quantum mechanical version of the hall effect, observed in twodimensional electron systems subjected to low temperatures and strong magnetic fields, in which the hall conductance.
Table of contents 1 silicon nanowire fieldeffect transistor 2. Dispersively detected pauli spinblockade in a silicon. Nonballistic spin fieldeffect transistor john schliemann, j. The field of semiconductor spintronics explores spin related quantum relativistic phenomena in solidstate systems. Quantum dot field effect transistors sciencedirect. Spintronics a portmanteau meaning spin transport electronics, also known as spin electronics, is the study of the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solidstate devices. This method includes the effect of both spin relaxation in the channel and the tunneling barrier between the sourcedrain and the channel. The spin fet is composed of ferromagnetic electrodes and an electron. New 2d quantum materials for nanoelectronics mit news. We start with an introduction to the concepts of electron spin and proposed spin field effect transistor in the first chapter. Quantum spin hall effect and topological field effect.
Initially used as a research tool to study charge carrier mobilities in closely packed quantum dot thin films, field effect transistors with quantum dots as the active layer have recently experienced a breakthrough in performance achievement of mobilities higher than 30 cm 2 v. Quantum spin transistor with a heisenberg spin chain. Quantum materials for spin and charge conversion npj. Download fulltext pdf quantum dot field effect transistors article pdf available in materials today 169. Fets control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source fets are also known as unipolar transistors since they involve. We demonstrated a spin injected field effect transistor in a highmobility inas heterostructure with empirically calibrated electrical injection and detection of ballistic spin polarized. We investigate mesoscopic spin transport through a quantum dot qd responded by a rotating and an oscillating magnetic fields.
Quant um spin hall effect and topological field effect tr. Request pdf quantum spin field effect transistor we propose, theoretically, a new type of quantum field effect transistor that operates purely on the flow of spin current in the absence of. The topic of this thesis is to study the working principle of the tfet and to go beyond the semiclassical models towards a fully quantum mechanical modeling of the tfet which has bandtoband tunneling btbt as its working principle. Soi generated by the lateral electric field f 0, f y, 0. This spin field effect transistor sfet is constructed without any magnetic material, but with the help of spin flip mechanism provided by a rotating external magnetic field of uniform. The spin field effect transistor spinfet is a future semiconductor spintronics device promising to deliver a performance superior to that achieved with present transistor technology.
The spin fieldeffect transistor spinfet is a future semiconductor spintronics device promising to deliver a performance superior to that achieved with present transistor technology. A coherent spin field effect transistor is provided by depositing a ferromagnetic base like cobalt on a substrate. There is a very good explanation for that in the feyman lectures on physics, chapter and 14, which i highly recommend if you are interested in physicsi will summarize the first paragraphs of chapter. Using the spin of the electrons in graphene and other layered material heterostructures the. A spin wave field effect transistor and numerical simulation of its performance. Two facetoface topgate electrodes allow us to independently tune the charge occupation of the quantum dot system down to the fewelectron limit. In fact, recently, gvozdic and ekenberg 37 pointed out that in the modulationdoped wide or coupled quantum wells, used for the bilayer nanowires fabrication, the large intrinsic f y exists. Digital switch and femtotesla magnetic field sensor based. We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field effect transistor. Control of spin precession in a spininjected field effect.
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